, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor 2SC6011 description ? high collector-emitter breakdown voltage- : v(br)ceo= 200v(min) ? good linearity of (ife ? complement to type 2sa2151 applications ? designed for audio and general purpose applications absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous base current-continuous collector power dissipation @ tc=25'c junction temperature storage temperature range value 200 200 6 15 4 160 150 -55-150 unit v v v a a w c ?c 1 1 \ 3 2 ^ pin 1. base 2, collector 3. emitter to-3pn package 4w..~ tuqii r~ itr r l. f f k b? *? ....c?- y- , f--s a ? " ': -*?*- j - -*-r dim a b c d e f g h j k l n q r s u mm win 19.90 15.50 4.70 0.90 1.90 3.40 2.90 3.20 0,595 20.50 1.90 10.89 4.90 3.35 1.995 5.90 v 9.90 max 20,10 15.70 4.90 1.10 2.10 3.60 3.10 3.40 0.605 20.70 2.10 10.91 5.10 3.45 2.005 6.10 10.10 g * ?*? l -?? -?- o -*-n-^ n.i semi-conductors reserves the right to change tost conditions, parameter limits and package dimensions nithout notice. information furnished hy n.i semi-conductors is helie\ed to he hoth accurate and reliable at the time of point to press. i louever. n.i semi-conductors assumes no responsihilil) for an> errors or omissions discovered in its use. n.i semi-conductors encourages customers to \erily that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor 2SC6011 electrical characteristics tc=25c unless otherwise specified symbol v(br)ceo vce(sat) icbo iebo hfe cob fi parameter collector-emitter breakdown voltage collector-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain output capacitance current-gain ? bandwidth product conditions lc= 50ma; ib= 0 lc= 5.0a; ib= 0.5a vcb= 200v; ie= 0 veb= 6v; lc= 0 lc= 3a; voe= 4v ie=0; vcb= 10v; f,est= 1.0mhz ie=-0.5a; vce=12v min 200 50 typ. 270 20 max 0.5 10 10 180 unit v v ua ua pf mhz classifications o 50-100 p 70-140 y 90-180
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